2009. 09. 04 1/4 semiconductor technical data kmb012n30qa n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainly suitable for dc/dc converter and battery pack.. features h v dss =30v, i d =12a. h drain to source on resistance. r ds(on) =7m ? (max.) @ v gs =10v r ds(on) =11m ? (max.) @ v gs =4.5v mosfet maximum ratings (ta=25 ? unless otherwise noted) flp-8 0.20+0.1/-0.05 p t 1.27 u 0.1 max millimeters 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 b2 g h l d a b1 dim 6.02 0.3 1.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ g h b1 b2 1 4 5 8 a p d l t u note1) surface mounted on 1 ? ? 1 ? fr4 board, t ? 10sec. 1 2 3 4 8 7 6 5 s s s g d d d d 1 2 3 4 8 7 6 5 kmb012n 30qa pin connection (top view) characteristic symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss ? 20 v drain current dc@ta=25 ? (note 1) i d 12 a pulsed (note 1) i dp 48 a drain power dissipation @ta=25 ? (note 1) p d 2.5 w maximum junction temperature t j 150 ? storage temperature range t stg -55~150 ? thermal resistance, junction to ambient (note 1) r thja 50 ? /w
2009. 09. 04 2/4 kmb012n30qa revision no : 0 electrical characteristics (ta=25 ? ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =250 a 30 - - v drain cut-off current i dss v gs =0v, v ds =30v - - 1 a gate to source leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate to source threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain to source on resistance r ds(on) v gs =10v, i d =12a (note2) - 6.0 7.0 m ? v gs =4.5v, i d =10a (note2) - 8.5 11.0 forward transconductance g fs v ds =5v, i d =12a (note2) - 48 - s dynamic input capaclitance c iss v ds =15v, v gs =0v, f=1mhz (note2) - 1310 - pf ouput capacitance c oss - 420 - reverse transfer capacitance c rss - 205 - total gate charge v gs =10v q g v ds =15v, v gs =10v, i d =12a (note2) - 27.0 - nc v gs =4.5v - 14.5 - gate to source charge q gs - 4.8 - gate to drain charge q gd - 6.6 - turn-on delay time t d(on) v ds =15v, v gs =10v i d =1a, r g =6 ? (note2) - 7.0 - ns turn-on rise time t r - 7.5 - turn-off delay time t d(off) - 28.3 - turn-off fall time t f - 9.9 - source to drain diode ratings continuous source current i s - - - 1.7 a pulsed source current i sp - - - 48 source to drain forward voltage v sd v gs =0v, i s =1.7a (note2) - 0.75 1.2 v note2) pulse test : pulse width ? 300 k , duty cycle ? 2%
2009. 09. 04 3/4 kmb012n30qa revision no : 0
2009. 09. 04 4/4 kmb012n30qa revision no : 0
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